Comment on "New structural picture of the Ge2Sb2Te5 phase-change alloy".

Comment on "Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy".

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5

The Ge2Sb2Te5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electroni...

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respecti...

Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅

The limit to which the phase change memory material Ge2Sb2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material’s ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge2Sb2Te...

Structural fingerprints of electronic change in the phase-change-material: Ge2Sb2Te5

In this paper, we generate a-Ge2Sb2Te5 models via ab initio molecular dynamic simulations, track the dynamic changes of network at 500 K, and correlate the structural changes in the course of the simulation with changes in electronic structure. Considerable fluctuations of the electronic gap are observed even for a model in equilibrium. We compare our study to experiments and other simulations....